Status: New
| Name & address of the Laboratory/Organization | CSIR - National Physical Laboratory (NPL) | |
| Website address | https://www.nplindia.org | |
| Affiliated to which Department/Ministry | Council of Scientific and Industrial Research (CSIR) | |
| CSR Registration Number | CSR00017422 | |
| Registration under 12A | ||
| Registration under 80G | ||
| Name of the CSR Nodal | Dr Neeraj Bhanot | |
| Contact information of CSR Nodal | 011-45608350, neeraj.bhanot@nplindia.org | |
| Principal Investigator | Prof. Govind Gupta, Chief Scientist, govind.npl@nic.in / govindnpl@gmail.com | |
| Co- Principal Investigator (Co-PI) | Dr. Preetam Singh, Principal Scientist, singhp@nplindia.org | |
| Objective on the basis of need | To develop highly sensitive, selective, and reliable gas sensors by integrating 2D materials with CMOS-compatible FETs. |
| Executive summary of the proposed project (In 250 words) | Globally, there is an increasing need for state-of-the-art gas-sensing technologies as environmental and industrial safety become primary considerations. The drawbacks of conventional gas sensing methods must be addressed, such as surface reactions, poor selectivity, high operating temperatures, and practicality in real-world situations. By developing and manufacturing gas sensors with two-dimensional (2D) materials integrated with field-effect transistors (FETs) that are compatible with complementary metal-oxide-semiconductor (CMOS) technology, this project seeks to revolutionize the field of gas sensing technology. The goals include the development of 2D semiconductors and surface modification to increase sensitivity, integration with CMOS technology, and the formidable task of precisely detecting dangerous gas concentrations. Our goal with this project is to overcome the present obstacles and pave the way for developing extremely sensitive, CMOS-compatible, and selective gas sensors. |
| Technology Readiness Level (If not a new project but an advancement of existing know how) | TRL-3 |
| Outomes or Deliverables | (i) Growth of 2D Semiconductors and their heterostructures with controlled over vacancies and dopants for efficient RT sensing of CO, NO, NO2, NH3 gases. (ii) CMOS Integrated 2D materials/heterostructure gas sensors with front/back gate technology. |
| Project aligned with which most relevant UN SDGs | Goal 11 - Sustainable Cities & Communities |
| Duration (In years) | 3 years |
| Expected Impact | 2D materials have unique surface properties and are compatible with CMOS fabrication processes. They offer long-term reliability, reproducibility, and accuracy in gas sensing measurements, making them highly desirable for use in gas sensing technology. |
| Implementation model (self- implemented/ outsourced partnership) | Outsourced Partnership |
| Total Budget (Recurring +Non-Recurring Expenses) | 2.2 Cr |